SEMICONDUCTOR DEVICE AND FABRICATION METHOD

摘要

A semiconductor device using a small-sized metal contact as a program gate of an antifuse, and a method of fabricating the same are described. The semiconductor device includes a metal contact structure formed on a semiconductor substrate of a peripheral circuit area, and includes a first gate insulating layer to be ruptured. A gate structure is formed on the semiconductor substrate to one side of the metal contact structure.

主权项

1. A method of fabricating a semiconductor device, the method comprising:
forming a plurality of gate structures on a semiconductor substrate; and forming a metal contact structure including a first gate insulating layer on the semiconductor substrate at one side of each of the gate structures.