发明名称 MICROWAVE PLASMA SOURCE AND PLASMA PROCESSING APPARATUS
摘要 PROBLEM TO BE SOLVED: To provide a microwave plasma source capable of ensuring an expanse of plasma, and forming uniform surface wave plasma even when reducing the number of microwave radiation units.SOLUTION: A microwave plasma source 2 includes a microwave output unit 30, a microwave supply unit 40, and a microwave radiation plate 50. The microwave supply unit 40 includes a plurality of microwave guidance mechanisms 43 provided on peripheral part 50a of the microwave radiation member 50 along the circumferential direction. The microwave radiation plate 50 includes: a plurality of slot antenna units 124 which include a slot 123 for microwave radiation and are provided so that the whole shape becomes a circumferential shape along a microwave guidance mechanism arrangement region; and a microwave transmission member 122 which is provided at a position corresponding to that of the microwave guidance mechanism arrangement region in a circumferential shape so as to cover slots 123 and transmits microwaves radiated from the slots 123.
申请公布号 JP2015118739(A) 申请公布日期 2015.06.25
申请号 JP20130259474 申请日期 2013.12.16
申请人 TOKYO ELECTRON LTD 发明人 KOMATSU TOMOHITO;IKEDA TARO;FUJINO YUTAKA
分类号 H05H1/46;C23C16/511;H01L21/3065;H01L21/31 主分类号 H05H1/46
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