| 摘要 |
PROBLEM TO BE SOLVED: To propose a novel method of forming a p-type region within a range including a trench bottom face. ! SOLUTION: A manufacturing method of a semiconductor device 10 which has a gate trench 34 and in which a p-type region 32 is formed within a range including a bottom face of the gate trench 34 comprises: a process of forming a trench 34 in a semiconductor substrate; a process of forming a boron-containing layer 35 in the trench 34 and near the bottom face of the trench 34; and a process of diffusing boron from the boron-containing layer 35 to the semiconductor substrate. ! COPYRIGHT: (C)2015,JPO&INPIT |
