发明名称 APPLICATION OF FLUORINE DOPED TIN (IV) OXIDE SNO<SB>2</SB>:F FOR MAKING A HEATING LAYER ON A PHOTOVOLTAIC PANEL AND THE PHOTOVOLTAIC PANEL
摘要 The invention consists in application of fluorine doped tin (IV) oxide SnO:F (FTO) for making a heating layer on a photovoltaic panel. The invention consists also in a photovoltaic panel characterized in that its front part (1) is covered with a conductive layer (2) of fluorine doped tin (IV) oxide SnO:F with the electrodes (3) deposited thereon. The conductive layer (2) becomes a heating layer when connected to the source of electric current. In preferred embodiment a transarent polymer film (4) is applied thereon inseparably and permanently bound with the conductive layer (2) of fluorine doped tin (IV) oxide SnO:F and the photovoltaic cell (5).
申请公布号 IN1232MUN2014(A) 申请公布日期 2015.07.03
申请号 IN2014MUMNP1232 申请日期 2014.06.17
申请人 ML SYSTEM SPÓLKA Z OGRANICZONA ODPOWIEDZIALNOSCIA 发明人 SKUPIEN KRZYSTOF;BORATYNSKI PAWEL;STANEK EDYTA;CYCON DAWID
分类号 H01L31/042 主分类号 H01L31/042
代理机构 代理人
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