发明名称 |
APPLICATION OF FLUORINE DOPED TIN (IV) OXIDE SNO<SB>2</SB>:F FOR MAKING A HEATING LAYER ON A PHOTOVOLTAIC PANEL AND THE PHOTOVOLTAIC PANEL |
摘要 |
The invention consists in application of fluorine doped tin (IV) oxide SnO:F (FTO) for making a heating layer on a photovoltaic panel. The invention consists also in a photovoltaic panel characterized in that its front part (1) is covered with a conductive layer (2) of fluorine doped tin (IV) oxide SnO:F with the electrodes (3) deposited thereon. The conductive layer (2) becomes a heating layer when connected to the source of electric current. In preferred embodiment a transarent polymer film (4) is applied thereon inseparably and permanently bound with the conductive layer (2) of fluorine doped tin (IV) oxide SnO:F and the photovoltaic cell (5). |
申请公布号 |
IN1232MUN2014(A) |
申请公布日期 |
2015.07.03 |
申请号 |
IN2014MUMNP1232 |
申请日期 |
2014.06.17 |
申请人 |
ML SYSTEM SPÓLKA Z OGRANICZONA ODPOWIEDZIALNOSCIA |
发明人 |
SKUPIEN KRZYSTOF;BORATYNSKI PAWEL;STANEK EDYTA;CYCON DAWID |
分类号 |
H01L31/042 |
主分类号 |
H01L31/042 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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