RESISTIVE MEMORY DEVICE CAPABLE OF IMPROVING SENSING MARGIN OF DATA

摘要

The present invention relates to a resistive memory device comprising: a plurality of unit memory cells where a resistive element and a cell selection element are connected in series; a cell block operating in response to a word line, a bit line and a source line; and a dummy line connected to a wiring layer formed in the lower part of one of the source line and the bit line when the source line and the bit line are formed in different wiring layers wherein a resistance of the dummy line is formed to be lower than a resistance of the wiring layer formed in the lower part.