发明名称 |
LDMOS device with short channel and associated fabrication method |
摘要 |
A method of fabricating an LDMOS device includes: forming a gate of the LDMOS device on a semiconductor substrate; performing tilt body implantation by implanting dopants of a first conductivity type in the semiconductor substrate using a mask, wherein the tilt body implantation is implanted at an angle from a vertical direction; performing zero tilt body implantation by implanting dopants of the first conductivity type using the same mask, wherein the zero tilt body implantation is implanted with zero tilt from the vertical direction, and wherein the tilt body implantation and the zero tilt body implantation are configured to form a body region of the LDMOS device; and forming a source region and a drain contact region of the LDMOS device, wherein the source region and the drain contact region are of a second conductivity type. |
申请公布号 |
US9087774(B2) |
申请公布日期 |
2015.07.21 |
申请号 |
US201314038647 |
申请日期 |
2013.09.26 |
申请人 |
Monolithic Power Systems, Inc. |
发明人 |
Jung Jeesung;McGregor Joel M.;Yoo Ji-Hyoung |
分类号 |
H01L21/265;H01L29/78;H01L29/66 |
主分类号 |
H01L21/265 |
代理机构 |
Perkins Coie LLP |
代理人 |
Perkins Coie LLP |
主权项 |
1. A method of fabricating an Lateral Diffused Metal Oxide Semiconductor field effect transistor (LDMOS) device, comprising:
forming a gate of the LDMOS device on a semiconductor substrate; performing tilt body implantation by implanting dopants of a first conductivity type in the semiconductor substrate using a mask, wherein the tilt body implantation is implanted at an angle from a vertical direction; performing zero tilt body implantation by implanting dopants of the first conductivity type using the same mask, wherein the zero tilt body implantation is implanted with zero tilt from the vertical direction, and wherein the tilt body implantation and the zero tilt body implantation are configured to form a body region of the LDMOS device; and forming a source region and a drain contact region of the LDMOS device, wherein the source region and the drain contact region are of a second conductivity type different from the first conductivity type. |
地址 |
San Jose CA US |