发明名称 |
Methods of forming an array of openings in a substrate, and related methods of forming a semiconductor device structure |
摘要 |
A method of forming an array of openings in a substrate. The method comprises forming a template structure comprising a plurality of parallel features and a plurality of additional parallel features perpendicularly intersecting the plurality of additional parallel features of the plurality over a substrate to define wells, each of the plurality of parallel features having substantially the same dimensions and relative spacing as each of the plurality of additional parallel features. A block copolymer material is formed in each of the wells. The block copolymer material is processed to form a patterned polymer material defining a pattern of openings. The pattern of openings is transferred to the substrate to form an array of openings in the substrate. A method of forming a semiconductor device structure, and a semiconductor device structure are also described. |
申请公布号 |
US9087699(B2) |
申请公布日期 |
2015.07.21 |
申请号 |
US201213646131 |
申请日期 |
2012.10.05 |
申请人 |
Micron Technology, Inc. |
发明人 |
Millward Dan B. |
分类号 |
H01L29/06;H01L21/033;H01L21/768;H01L27/108 |
主分类号 |
H01L29/06 |
代理机构 |
TraskBritt |
代理人 |
TraskBritt |
主权项 |
1. A method of forming an array of openings in a substrate, comprising:
forming a template structure comprising a plurality of parallel features and a plurality of additional parallel features perpendicularly intersecting the plurality of additional parallel features over a substrate to define wells, each of the plurality of parallel features having substantially the same dimensions and relative spacing as each of the plurality of additional parallel features; forming a block copolymer material in the wells; processing the block copolymer material to form a patterned polymer material defining a pattern of openings; and transferring the pattern of openings to the substrate to form an array of openings in the substrate. |
地址 |
Boise ID US |