发明名称 Methods of forming an array of openings in a substrate, and related methods of forming a semiconductor device structure
摘要 A method of forming an array of openings in a substrate. The method comprises forming a template structure comprising a plurality of parallel features and a plurality of additional parallel features perpendicularly intersecting the plurality of additional parallel features of the plurality over a substrate to define wells, each of the plurality of parallel features having substantially the same dimensions and relative spacing as each of the plurality of additional parallel features. A block copolymer material is formed in each of the wells. The block copolymer material is processed to form a patterned polymer material defining a pattern of openings. The pattern of openings is transferred to the substrate to form an array of openings in the substrate. A method of forming a semiconductor device structure, and a semiconductor device structure are also described.
申请公布号 US9087699(B2) 申请公布日期 2015.07.21
申请号 US201213646131 申请日期 2012.10.05
申请人 Micron Technology, Inc. 发明人 Millward Dan B.
分类号 H01L29/06;H01L21/033;H01L21/768;H01L27/108 主分类号 H01L29/06
代理机构 TraskBritt 代理人 TraskBritt
主权项 1. A method of forming an array of openings in a substrate, comprising: forming a template structure comprising a plurality of parallel features and a plurality of additional parallel features perpendicularly intersecting the plurality of additional parallel features over a substrate to define wells, each of the plurality of parallel features having substantially the same dimensions and relative spacing as each of the plurality of additional parallel features; forming a block copolymer material in the wells; processing the block copolymer material to form a patterned polymer material defining a pattern of openings; and transferring the pattern of openings to the substrate to form an array of openings in the substrate.
地址 Boise ID US