发明名称 Internal voltage generation circuits
摘要 An internal voltage generation circuit utilizing dual comparison signal generators and dual drivers to drive the internal voltage to a selected level. The second driver is responsive to a control signal derived from both of the comparison signal generators. The internal voltage generation circuit overcomes a problem with prior art circuits that may not permit the internal voltage to be driven to the selected level over a range of power supply voltages.
申请公布号 US9086713(B2) 申请公布日期 2015.07.21
申请号 US201313846820 申请日期 2013.03.18
申请人 SK Hynix Inc. 发明人 Choi Young Geun
分类号 H02M3/157;G05F1/56 主分类号 H02M3/157
代理机构 William Park & Associates Ltd. 代理人 William Park & Associates Ltd.
主权项 1. An internal voltage generation circuit, the circuit comprising: a first internal voltage driver configured to be driven by a first power supply voltage and configured to drive an internal voltage to the first power supply voltage when the internal voltage is less than a first target level; and a second internal voltage driver configured to be driven by a second power supply voltage and configured to drive the internal voltage to the second power supply voltage when the internal voltage is greater than or equal to the first target level and is less than a second target level, wherein the second internal voltage driver includes: a second comparison signal generator configured to be driven by the second power supply voltage and configured to compare the internal voltage with a second reference voltage to generate a second comparison signal; a pull-up signal generator configured to generate a pull-up signal enabled when both the first and second comparison signals are disabled; and a second driver configured to be driven by the second power supply voltage and configured to drive the internal voltage in response to the pull-up signal.
地址 Gyeonggi-do KR