Solid-state imaging apparatus and camera

摘要

A solid-state imaging apparatus which includes a semiconductor portion having a first face on the light incident side and a second face opposite to the first face, and an optical system arranged on the first face, comprising a first semiconductor region of a first conductivity type provided on the second face side in the semiconductor region, a photoelectric conversion portion provided in the semiconductor portion so as to surround the first semiconductor region, including a second semiconductor region of the first conductivity type, and a gate electrode arranged between the first and the second semiconductor regions on the second face, for transferring a charge generated in the photoelectric conversion portion to the first semiconductor region, wherein the optical system is configured so that a light intensity in the second semiconductor region is higher than that in the first semiconductor region.

主权项

1. A solid-state imaging apparatus which includes a semiconductor portion having a first face on the light incident side and a second face which is opposite to the first face, and an optical system arranged on the first face of the semiconductor portion, comprising:
a first semiconductor region of a first conductivity type configured to be provided on the second face side in the semiconductor region; a photoelectric conversion portion configured to be provided in the semiconductor portion so as to surround the first semiconductor region, and include a second semiconductor region of the first conductivity type; and a gate electrode configured to be arranged between the first semiconductor region and the second semiconductor region on the second face of the semiconductor portion, and transfer a charge generated in the photoelectric conversion portion to the first semiconductor region, wherein the optical system is configured so as to make a light intensity in the second semiconductor region higher than that in the first semiconductor region.