Enhanced EUV lithography system

摘要

The present disclosure provides a semiconductor lithography system. The lithography system includes a projection optics component. The projection optics component includes a curved aperture. The lithography system includes a photo mask positioned over the projection optics component. The photo mask contains a plurality of elongate semiconductor patterns. The semiconductor patterns each point in a direction substantially perpendicular to the curved aperture of the projection optics component. The present disclosure also provides a method. The method includes receiving a design layout for a semiconductor device. The design layout contains a plurality of semiconductor patterns each oriented in a given direction. The method includes transforming the design layout into a mask layout. The semiconductor patterns in the mask layout are oriented in a plurality of different directions as a function of their respective location.

主权项

1. A semiconductor fabrication apparatus, comprising:
a lithography mask having a plurality of patterns, wherein at least two of the plurality of patterns are oriented in different directions, and wherein orientations of the at least two patterns are a function of their locations over the mask.