发明名称 |
THIN-FILM TRANSISTOR SUBSTRATE WITH PROTECTION FILM, AND METHOD OF MANUFACTURING THE SAME |
摘要 |
<p>PROBLEM TO BE SOLVED: To provide a thin-film transistor substrate with a protection film and that can provide a high drive stability.SOLUTION: A thin-film transistor substrate includes: a thin-film transistor; and a protection film coating the thin-film transistor and formed of a cured product of a photosensitive siloxane composition. The thin-film transistor includes a semiconductor layer composed of an oxide semiconductor. The photosensitive siloxane composition contains: at least two kinds of polysiloxane having different alkali dissolution rates; a photosensitive agent; and a solvent.</p> |
申请公布号 |
JP2015146332(A) |
申请公布日期 |
2015.08.13 |
申请号 |
JP20140017619 |
申请日期 |
2014.01.31 |
申请人 |
NARA INSTITUTE OF SCHIENCE AND TECHNOLOGY;MERCK PERFORMANCE MATERIALS MANUFACTURING GK |
发明人 |
ISHIKAWA YASUAKI;URAOKA YUKIHARU;NONAKA TOSHIAKI |
分类号 |
H01L21/336;C08G77/04;H01L29/786 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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