发明名称 THIN-FILM TRANSISTOR SUBSTRATE WITH PROTECTION FILM, AND METHOD OF MANUFACTURING THE SAME
摘要 <p>PROBLEM TO BE SOLVED: To provide a thin-film transistor substrate with a protection film and that can provide a high drive stability.SOLUTION: A thin-film transistor substrate includes: a thin-film transistor; and a protection film coating the thin-film transistor and formed of a cured product of a photosensitive siloxane composition. The thin-film transistor includes a semiconductor layer composed of an oxide semiconductor. The photosensitive siloxane composition contains: at least two kinds of polysiloxane having different alkali dissolution rates; a photosensitive agent; and a solvent.</p>
申请公布号 JP2015146332(A) 申请公布日期 2015.08.13
申请号 JP20140017619 申请日期 2014.01.31
申请人 NARA INSTITUTE OF SCHIENCE AND TECHNOLOGY;MERCK PERFORMANCE MATERIALS MANUFACTURING GK 发明人 ISHIKAWA YASUAKI;URAOKA YUKIHARU;NONAKA TOSHIAKI
分类号 H01L21/336;C08G77/04;H01L29/786 主分类号 H01L21/336
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