High Voltage Diode

摘要

A trench-isolated RESURF diode structure (100) is provided which includes a substrate (150) in which is formed anode (130, 132) and cathode (131) contact regions separated from one another by a shallow trench isolation region (114, 115), along with a non-uniform cathode region (104) and peripheral anode regions (106, 107) which define vertical and horizontal p-n junctions under the anode contact regions (130, 132), including a horizontal cathode/anode junction that is shielded by the heavily doped anode contact region (132).

主权项

1. A semiconductor diode device, comprising:
a semiconductor substrate region; an isolation structure for electrically isolating the semiconductor substrate region; a heavily doped first terminal contact region of a first conductivity type formed in the semiconductor substrate region; a heavily doped second terminal contact region of a second conductivity type located in the semiconductor substrate region to be spaced apart from the heavily doped first terminal contact region; a first terminal well region of the first conductivity type located in the semiconductor substrate region and under a first portion of the heavily doped first terminal contact region; and a second terminal well region of the second conductivity type located in the semiconductor substrate region comprising a deep portion located around the heavily doped second terminal contact region and a shallow portion that extends from the deep portion to the first terminal well region, where a peripheral portion of the shallow portion is located under a second portion of the heavily doped first terminal contact region.