| 发明名称 |
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE INCLUDING NICKEL-CONTAINING FILM |
| 摘要 |
A method of manufacturing a semiconductor device is provided. A substrate including a structure in which a hole is formed is prepared. Precursors including a nickel alkoxide compound are vaporized. A nickel-containing layer is formed in the hole by providing the vaporized precursors including the nickel alkoxide compound onto the substrate. |
| 申请公布号 |
US2015228663(A1) |
申请公布日期 |
2015.08.13 |
| 申请号 |
US201514598659 |
申请日期 |
2015.01.16 |
| 申请人 |
Samsung Electronics Co., Ltd. |
发明人 |
Youn Sang-chul;Park Gyu-hee;Cho Youn-joung;Ryu Seung-min |
| 分类号 |
H01L27/115;H01L21/285;H01L29/49;H01L21/768 |
主分类号 |
H01L27/115 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of manufacturing a semiconductor device, the method comprising:
preparing a substrate comprising a structure in which a hole is formed; vaporizing precursors comprising a nickel alkoxide compound; and forming a nickel-containing layer in the hole by providing the vaporized precursors comprising the nickel alkoxide compound onto the substrate. |
| 地址 |
Suwon-si KR |
