| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor epitaxial wafer having a buffer layer capable of surely performing lattice matching with a channel layer while securing high insulation properties. ! SOLUTION: Disclosed is a semiconductor epitaxial wafer 1 formed by laminating a buffer layer 3 and a channel layer 4 on a substrate 2. The buffer layer 3 includes: an insulating layer 3a provided facing the substrate 2 formed using AIN as the main component; and a lattice matching layer 3b provided facing the channel 4 formed using InxAl1-xN as the main component. ! COPYRIGHT: (C)2015,JPO&INPIT |
