| 摘要 |
<p>When a visible light image and an image of a long-wavelength region with a near-infrared wavelength or longer are acquired using one imaging sensor, a clear image of the long-wavelength region with the near-infrared wavelength or longer is obtained. In an imaging sensor 1 in an imaging device, a plurality of photoelectric conversion parts 2 (2A, 2B) are formed on one semiconductor substrate 10. The respective photoelectric conversion parts 2A in a group of the plurality of photoelectric conversion parts 2 (2A, 2B) exhibit spectral sensitivity characteristics that peak in a long-wavelength region with a near-infrared wavelength or longer. The plurality of photoelectric conversion parts 2 (2A, 2B) include photoelectric conversion parts 2B exhibiting spectral sensitivity characteristics that peak in a visible light region.</p> |
