| 摘要 |
<p>A memory cell array includes a plurality of memory strings divided into a plurality of sub-blocks, each memory string including a plurality of memory cells which are connected to word lines and each sub-block being erasable independently with respect to the other sub-blocks. During writing, a control unit changes a verification level to be applied to a selected word line included in a selected sub-block depending on whether or not data has been written in a non-selected sub-block.</p> |
