发明名称 サファイア単結晶の製造方法
摘要 <p><P>PROBLEM TO BE SOLVED: To prevent contamination by hardly soluble matter into sapphire melt inside a molybdenum crucible. <P>SOLUTION: This method for producing a sapphire single crystal by the CZ method comprises: a pre-combusting step of subjecting the molybdenum crucible 14 to a heat treatment in a reducing atmosphere in a chamber 11, thereby removing an oxide film at its surface; a melting step of introducing a sapphire raw material into the molybdenum crucible 14 and melting the same, thereby obtaining the sapphire melt 21; and a pulling step of pulling a seed crystal soaked in the sapphire melt 21, thereby obtaining the sapphire single crystal 20. The reducing atmosphere is a hydrogen atmosphere with a hydrogen concentration of≥10 ppm and≤5 vol.%. <P>COPYRIGHT: (C)2013,JPO&INPIT</p>
申请公布号 JP5780114(B2) 申请公布日期 2015.09.16
申请号 JP20110237014 申请日期 2011.10.28
申请人 发明人
分类号 C30B15/10;C30B29/20 主分类号 C30B15/10
代理机构 代理人
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