发明名称 荷電粒子ビーム露光における後方散乱強度の生成方法,生成プログラム及びその方法を利用した半導体装置の製造方法
摘要 <p><P>PROBLEM TO BE SOLVED: To generate the backscattering intensity with higher accuracy by reducing the generation man-hour of parameters. <P>SOLUTION: In a method of generating the backscattering intensity of charged particles, parameters of a k-th layer is determined according to the mixture ratio obtained by the weighted mean of pattern area density from a first layer to a (k-1)th layer and the depth. Intensities of downward transmission electrons, reflection electrons and upward transmission electrons are determined, and the sum of the reflection electrons on the uppermost layer directly under a resist layer and the upward transmission electrons is output as the backscattering intensity to the resist layer. <P>COPYRIGHT: (C)2012,JPO&INPIT</p>
申请公布号 JP5779886(B2) 申请公布日期 2015.09.16
申请号 JP20110008456 申请日期 2011.01.19
申请人 发明人
分类号 H01L21/027;G03F7/20 主分类号 H01L21/027
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