| 摘要 |
<p>PROBLEM TO BE SOLVED: To consider internal stress since a semiconductor device having a conductive film is affected by internal stress of the conductive film.SOLUTION: In a semiconductor device having an n-channel type TFT provided over an insulating surface, an impurity element is implanted to a conductive film, such as a gate electrode, so that a semiconductor film is subjected to tensile stress. In a semiconductor device having a p-channel type TFT provided over an insulating surface, impurity is implanted to a conductive film, such as a gate electrode, so that a semiconductor film is subjected to compressive stress.</p> |
