| 发明名称 | Magnetic memory device and method of magnetic domain wall motion | ||
| 摘要 | A magnetic memory device comprises a first electrode, a second electrode, a laminated structure comprising plural first magnetic layers being provided between the first electrode and the second electrode, a second magnetic layer comprising different composition elements from that of the first magnetic layer and being provided between plural first magnetic layers, a piezoelectric body provided on a opposite side to a side where the first electrode is provided in the laminated structure, and a third electrode applying voltage to the piezoelectric body and provided on a different position from a position where the first electrode is provided in the piezoelectric body. | ||
| 申请公布号 | US9142759(B2) | 申请公布日期 | 2015.09.22 |
| 申请号 | US201414310152 | 申请日期 | 2014.06.20 |
| 申请人 | Kabushiki Kaisha Toshiba | 发明人 | Morise Hirofumi;Fukuzawa Hideaki;Kikitsu Akira;Fukuzumi Yoshiaki |
| 分类号 | G11C11/15;H01L43/08;G11C11/16;H01L27/22;H01L41/09;H01L41/12;H01L43/10;H01F10/32 | 主分类号 | G11C11/15 |
| 代理机构 | Amin, Turocy & Watson, LLP | 代理人 | Amin, Turocy & Watson, LLP |
| 主权项 | 1. A magnetic memory device comprising: plural laminated structures, each laminated structure comprising; plural first magnetic layers; and a second magnetic layer comprising different composition elements from that of the first magnetic layer and being provided between plural first magnetic layers; a piezoelectric body provided to surround the plural laminated structures; and a first electrode and a second electrode applying voltage to the piezoelectric body. | ||
| 地址 | Tokyo JP | ||