| 发明名称 | Compound semiconductor device and method of fabricating the same | ||
| 摘要 | A compound semiconductor device and method of fabricating the same according to the present invention is disclosed. The compound semiconductor device comprises a substrate having at least a first doped region and at least a second doped region, and a semiconductor layer disposed on the substrate, wherein doping conditions of said first doped region and said second doped region may be different from each other. | ||
| 申请公布号 | US9142621(B2) | 申请公布日期 | 2015.09.22 |
| 申请号 | US201313975523 | 申请日期 | 2013.08.26 |
| 申请人 | Formosa Epitaxy Incorporation | 发明人 | Tun Chun-Ju;Lin Yi-Chao;Chiang Chen-Fu;Kuo Cheng-Huang |
| 分类号 | H01L29/36;H01L29/20;H01L21/266;H01L21/02;H01L31/0352;H01L31/18;H01L21/225;H01L21/265;H01L29/201;H01L29/205;H01L29/207;H01L33/24 | 主分类号 | H01L29/36 |
| 代理机构 | Rosenberg, Klein & Lee | 代理人 | Rosenberg, Klein & Lee |
| 主权项 | 1. A compound semiconductor device, comprising: a substrate having at least a first doped region and at least a second doped region on the surface of said substrate; and a semiconductor layer disposed on said substrate; wherein a lattice constant of said semiconductor layer is different from a lattice constant of said substrate, and doping conditions of said first doped region and said second doped region are different from each other, and wherein the growth rates of said semiconductor layer on said first doped region and the growth rate of said semiconductor layer on said second doped region are both positive and different from each other. | ||
| 地址 | Taoyuan County TW | ||