发明名称 Semiconductor component and method for producing a semiconductor component
摘要 A semiconductor component comprises a semiconductor body with at least one protective trench in the semiconductor body. An insulation layer is situated at least at the bottom of the protective trench. An electrically conductive layer having a thickness D is formed on the insulation layer in the protective trench, wherein the electrically conductive layer only partly fills the protective trench.
申请公布号 US9142444(B2) 申请公布日期 2015.09.22
申请号 US201313895132 申请日期 2013.05.15
申请人 INFINEON TECHNOLOGIES AG 发明人 Zundel Markus;Bacher Erwin;Behrendt Andreas;Ortner Joerg;Rieger Walter;Zelsacher Rudolf
分类号 H01L21/8242;H01L21/762;H01L29/06;H01L29/40;H01L29/78;H01L21/8234;H01L29/861 主分类号 H01L21/8242
代理机构 SpryIP, LLC 代理人 SpryIP, LLC
主权项 1. A method for producing a semiconductor component, comprising: providing a semiconductor body, producing at least one protective trench in the semiconductor body, producing an insulation layer on the sidewalls and at the bottom of the protective trench, producing an electrically conductive layer having a thickness D on the insulation layer in the protective trench, wherein the electrically conductive layer only partly fills the protective trench, applying another insulation layer over the electrically conductive layer, the another insulation layer disposed at least partially in the protective trench and having a connection opening providing access to the electrically conductive layer,applying a protective layer in the protective trench such that the protective layer is at least partially on the electrically conductive layer.
地址 Neubiberg DE