发明名称 Method for singulating electronic components from a substrate
摘要 Methods for forming electronic assemblies are provided. A device substrate having a plurality of electronic components embedded therein is provided. The device substrate is attached to a carrier substrate using an adhesive material. A plurality of cuts are formed through the device substrate to divide the device substrate into a plurality of portions. Each of the plurality of portions includes at least one of the electronic components. A force is applied to each of the plurality of portions in a direction away from the carrier substrate to remove the plurality of portions from the carrier substrate.
申请公布号 US9142434(B2) 申请公布日期 2015.09.22
申请号 US200813125502 申请日期 2008.10.23
申请人 FREESCALE SEMICONDUCTOR, INC. 发明人 Gao Wei;Amrine Craig S.;Gong Zhiwei;Hayes Scott M.;Keser Lizabeth Ann;Leal George R.;Lytle William H.
分类号 H01L21/00;H01L21/67;H01L21/56;H01L21/683;H01L21/78;H01L23/31;H01L23/00 主分类号 H01L21/00
代理机构 代理人 Geld Jonathan N.
主权项 1. A method for forming electronic assemblies comprising: encapsulating electronic components within a device panel; attaching the device panel to a carrier substrate using an adhesive material, the carrier substrate having a plurality of openings therethrough at the time of said attaching, wherein the carrier substrate is below the entirety of the device panel and supports the device panel, and the carrier substrate has a width greater than or equal to that of the device panel; forming a plurality of cuts through the device panel to divide the device panel into a plurality of device panel portions, each device panel portion comprising at least one of the electronic components and being aligned with one of the openings through the carrier substrate, wherein each cut of the plurality of cuts extends into the adhesive material but not into the carrier substrate; and inserting at least one ejection member through openings in the carrier substrate from a side opposite the device panel to lift the plurality of device panel portions from the carrier substrate.
地址 Austin TX US