Hermetic packaging of integrated circuit components having a capacitor for transfer of electrical signals

摘要

A method for forming an integrated circuit includes transforming at least a portion of a first substrate layer to form a conductive region within the first substrate layer. An integrated circuit device is provided proximate an outer surface of the first substrate layer. The integrated circuit device transmits or receives electrical signals through the conductive region. A second substrate layer is disposed proximate to the outer surface of the first substrate layer to enclose the integrated circuit device in a hermetic environment.

主权项

1. A hermetically-packaged integrated circuit, comprising:
a first substrate layer having a first dielectric region operable to perform as part of a capacitor for the transfer of electrical signals, the first dielectric region positioned proximate an outer surface of the first substrate layer; an integrated circuit device positioned proximate the outer surface of the first substrate layer; a via formed in an underside surface of the first substrate layer, the via formed through at least a portion of the first substrate layer, the via configured to receive an electrode of the capacitor formed therein; and a second substrate layer disposed proximate the outer surface of the first substrate layer to enclose the integrated circuit device in a hermetic environment; wherein the first substrate layer is comprised of silicon, and wherein the first dielectric region comprises an oxidized silicon formed using a thermal process.