SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To achieve downsizing of a semiconductor device and reduce an area of a drive circuit of the semiconductor device having a memory cell.SOLUTION: A semiconductor device includes: an element formation layer 301 having at least a first semiconductor element; first wiring 302 provided on the element formation layer 301; an interlayer film 305 provided on the first wiring 302; and second wiring 303 which overlaps with the first wiring 302 through the interlayer film 305. The first wiring 302, the interlayer film 305, and the second wiring 303 form a second semiconductor element. The same voltage is supplied to the first wiring 302 and the second wiring 303.