发明名称 Sn PLATED MATERIAL AND PRODUCTION METHOD THEREOF
摘要 PROBLEM TO BE SOLVED: To provide an Sn plated material which is low in insertion force when used as a material for electrical elements, e.g. connection terminals capable of being inserted/removed and ejection and a method of producing the Sn plated material at low costs.SOLUTION: An Sn plated material is provided with an Sn plating on the surface of a substrate 10 composed of copper or a copper alloy. A ground layer 12 composed of Ni or a Cu-Ni alloy is formed on the surface of the substrate 10, and an outermost layer which consists of a Cu-Sn alloy layer 14 composed of a large number of crystal grains of a Cu-Sn alloy and an Sn layer 16 formed in concave parts among the crystal grains of the adjacent Cu-Sn alloy in the outer most layer is formed on the surface of the ground layer 12. The area ratio of the Sn layer 16 occupying in the outermost surface is 20-80%, and the maximum thickness of the Sn layer 16 is smaller than the average grain particle of the crystal grains of the Cu-Sn alloy.
申请公布号 JP2015180770(A) 申请公布日期 2015.10.15
申请号 JP20150030140 申请日期 2015.02.19
申请人 DOWA METALTECH KK;YAZAKI CORP 发明人 MURATA TATSUNORI;KOTANI HIROTAKA;ENDO HIDEKI;SUGAWARA AKIRA;SONODA YUTA;KATO TETSUO;OSUMI HIDEKI;TOYOIZUMI JUN
分类号 C25D5/12;C22C13/00;C25D5/50;C25D7/00;H01B1/02;H01B5/02;H01B13/00;H01R13/03 主分类号 C25D5/12
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