APPARATUSES AND METHODS OF READING MEMORY CELLS

摘要

The disclosed technology generally relates to memory apparatuses and methods of operating the same, and more particularly to memory arrays and methods of reading memory cells in a memory array, such as a cross point memory array. In one aspect, the method comprises providing a memory array comprising a memory cell in one of a plurality of states. The method additionally comprises determining whether a threshold voltage (Vth) of the memory cell has a value within a predetermined read voltage window. A test pulse is applied to the memory cell if it is determined that the threshold voltage has a value within the predetermined read voltage window. The state of the memory cell may be determined based on a response of the memory cell to the test pulse, wherein the state corresponds to the one of the pluralities of states of the memory cell prior to receiving the test pulse.

主权项

1. A method of reading a memory cell in a memory array, comprising:
providing a memory array comprising a memory cell in one of a plurality of states; determining whether a threshold voltage (Vth) of the memory cell has a value within a predetermined read voltage window; applying a test pulse to the memory cell having the threshold voltage within the predetermined read voltage window; and determining the state of the memory cell based on a response of the memory cell to the test pulse, wherein the state corresponds to the one of the plurality of states of the memory cell prior to receiving the test pulse.