SEMICONDUCTOR DEVICE AND ELECTRONIC DEVICE

摘要

Provided is a semiconductor device which can achieve a reduction in its area, reduction in power consumption, and operation at a high speed. A semiconductor device 10 has a structure in which a circuit 31 including a memory circuit and a circuit 32 including an amplifier circuit are stacked. With this structure, the memory circuit and the amplifier circuit can be mounted on the semiconductor device 10 while the increase in the area of the semiconductor device 10 is suppressed. Thus, the area of the semiconductor device 10 can be reduced. Further, the circuits are formed using OS transistors, so that the memory circuit and the amplifier circuit which have low off-state current and which can operate at a high speed can be formed. Therefore, a reduction in power consumption and improvement in operation speed of the semiconductor device 10 can be achieved.

主权项

1. A semiconductor device comprising:
a memory circuit comprising a first transistor over a single crystal semiconductor substrate, the first transistor including a first channel formation region provided in the single crystal semiconductor substrate; an insulating layer over the memory circuit; and an amplifier circuit comprising a second transistor over the insulating layer, the second transistor including a second channel formation region provided in an oxide semiconductor layer, wherein the memory circuit and the amplifier circuit are electrically connected to each other, and wherein the memory circuit and the amplifier circuit comprise mutually overlapping regions.