INTEGRATED CIRCUIT WITH NANOWIRE SENSORS COMPRISING A SHIELDING LAYER, SENSING APPARATUS, MEASURING METHOD AND MANUFACTURING METHOD

摘要

An integrated circuit (100) comprising a substrate (110); an insulating layer (120) over said substrate; and a first nanowire element (140a) and a second nanowire element (140b) adjacent to said first nanowire element on said insulating layer; wherein the first nanowire element is arranged to be exposed to a medium comprising an analyte of interest, and wherein the second nanowire element is shielded from said medium by a shielding layer (150) over said second nanowire element. A sensing apparatus including such an IC, a sensing method using such an IC and a method of manufacturing such an IC are also disclosed.

主权项

1. An integrated circuit comprising:
a substrate; an insulating layer over said substrate; and a first nanowire element and a second nanowire element on said insulating layer; wherein the first nanowire element is a source node of a first transistor and the second nanowire element is a source node of a second transistor. said first transistor and said second transistor having a common drain node, wherein the first nanowire element is arranged for exposure to a medium comprising an analyte, and wherein the second nanowire element is arranged to be shielded from said medium by a shielding layer over said second nanowire element.