发明名称 |
EVALUATION METHOD OF SEMICONDUCTOR SUBSTRATE |
摘要 |
PROBLEM TO BE SOLVED: To provide an evaluation method of a semiconductor substrate capable of evaluating a state of a crystal defect of a semiconductor substrate even when there is no characteristic light emission.SOLUTION: The evaluation method of a semiconductor substrate having a crystal defect to which a defect recovery heat treatment is applied for recovering the crystal defect includes steps of: measuring intensity of band end light emission of the semiconductor substrate by using a luminescence method; and evaluating a degree of recovery of crystallinity of the semiconductor substrate on the basis of a result of the measurement. |
申请公布号 |
JP2015185811(A) |
申请公布日期 |
2015.10.22 |
申请号 |
JP20140063839 |
申请日期 |
2014.03.26 |
申请人 |
SHIN ETSU HANDOTAI CO LTD |
发明人 |
OTSUKI TAKESHI;TAKENO HIROSHI |
分类号 |
H01L21/66 |
主分类号 |
H01L21/66 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|