发明名称 EVALUATION METHOD OF SEMICONDUCTOR SUBSTRATE
摘要 PROBLEM TO BE SOLVED: To provide an evaluation method of a semiconductor substrate capable of evaluating a state of a crystal defect of a semiconductor substrate even when there is no characteristic light emission.SOLUTION: The evaluation method of a semiconductor substrate having a crystal defect to which a defect recovery heat treatment is applied for recovering the crystal defect includes steps of: measuring intensity of band end light emission of the semiconductor substrate by using a luminescence method; and evaluating a degree of recovery of crystallinity of the semiconductor substrate on the basis of a result of the measurement.
申请公布号 JP2015185811(A) 申请公布日期 2015.10.22
申请号 JP20140063839 申请日期 2014.03.26
申请人 SHIN ETSU HANDOTAI CO LTD 发明人 OTSUKI TAKESHI;TAKENO HIROSHI
分类号 H01L21/66 主分类号 H01L21/66
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