| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide an optical modulator that allows reduction in difference in electric field strength depending on the position of a quantum well. <P>SOLUTION: An optical modulator includes: a p-InP clad layer 22; an n-InP clad layer 23; and a multiple quantum well 40 sandwiched between the p-InP clad layer 22 and the n-InP clad layer and having a plurality of well layers 1 and a plurality of barrier layers 2 alternately laminated. The plurality of barrier layers 2 include a second conductivity-type barrier layer 2a into which second conductivity-type dopants contained in the n-InP clad layer 23 are introduced. The second conductivity-type barrier layer 2a is provided in a range of the multiple quantum well 40 in which first conductivity-type dopants contained in the p-InP clad layer 22 are diffused. <P>COPYRIGHT: (C)2013,JPO&INPIT</p> |
