METHOD FOR FORMING PATTERN AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

In one embodiment, a method for forming pattern includes forming a guide layer on a substrate, forming a copolymer layer of a high-molecular block copolymer on the guide layer; and forming a phase-separation structure with a phase-separation cycle d by self-assembling the copolymer layer. The high-molecular block copolymer includes a first and a second polymer. The guide layer includes a first and a second region disposed on the substrate. Widths of the first and second region respectively are approximately (d/2)×n and (d/2)×m. Both of the first and second region are to be pinned with none of the first and second polymer. Surface energies of the first and second region are different from one another. Integers n and m are odd numbers. Value d is a phase-separation cycle of the high-molecular block copolymer.

主权项

1. A method for forming pattern using a high-molecular block copolymer including a first and a second polymer, the method comprising:
forming a guide layer on a substrate, the guide layer including a first and a second region disposed on the substrate, widths of the first and second region respectively being approximately (d/2)×n and (d/2)×m, both of the first and second region being to be pinned with none of the first and second polymer, and surface energies of the first and second region being different from one another, where n, m: odd number, and d: a phase-separation cycle of the high-molecular block copolymer; forming a copolymer layer of the high-molecular block copolymer on the guide layer; and forming a phase-separation structure with the phase-separation cycle d by self-assembling the copolymer layer.