ULTRAVIOLET LIGHT-EMITTING DIODE AND ELECTRIC APPARATUS HAVING THE SAME

摘要

To improve light extraction efficiency of a deep ultraviolet light-emitting diode (DUVLED), a typical LED element has a single crystal substrate made of sapphire or AlN, The ultraviolet layer is arranged as a film stack having an n-type conductive layer, a recombination layer, and a p-type conductive layer. A stack of a p-type contact layer and a reflective electrode is disposed on the p-type conductive layer. The ultraviolet emission layer and a p-type contact layer are made of mixed crystal of AlN and GaN. The transmittance for the emission wavelength of the p-type contact layer is increased, and the light extraction efficiency is improved. Also an LED element whose p-type contact layer is configured in a layered structure and whose reflective electrode is patterned is provided. Moreover, an electric appliance having such LED elements is provided.

主权项

1. An ultraviolet light-emitting diode comprising:
a single crystalline substrate; an ultraviolet emission layer made of a mixed crystal having components of AlN and GaN, the ultraviolet emission layer disposed in contact with the substrate, the ultraviolet emission layer including
an n-type conductive layer;a recombination layer on the n-type conduction layer; anda p-type conduction layer on the recombination layer; a p-type contact layer of mixed crystal of AlN and GaN, the p-type contact layer being electrically connected with the p-type conduction layer; and a reflective electrode that reflects UV radiation emitted from the ultraviolet emission layer, wherein the reflective electrode is electrically coupled to the p-type contact layer.