| 发明名称 |
LIGHT EMITTING DIODE AND METHOD OF FABRICATING THE SAME |
| 摘要 |
A method of fabricating a light emitting diode (LED) includes: sequentially stacking a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer on a substrate; and separating the substrate into unit chips, and at the same time, forming a concavo-convex structure having the shape of irregular vertical lines in a side surface of the unit chip. |
| 申请公布号 |
US2015311390(A1) |
申请公布日期 |
2015.10.29 |
| 申请号 |
US201514795167 |
申请日期 |
2015.07.09 |
| 申请人 |
Seoul Viosys Co., Ltd. |
发明人 |
KIM Kyung Wan;KIM Tae Kyoon;YOON Yeo Jin;KIM Ye Seul;OH Sang Hyun;LEE Jin Woong;KIM In Soo |
| 分类号 |
H01L33/22;H01L33/00 |
主分类号 |
H01L33/22 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of fabricating a light emitting diode (LED), comprising:
sequentially stacking a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer on a substrate; and separating the substrate into unit chips, and at the same time, forming a concavo-convex structure having the shape of irregular vertical lines in a side surface of the unit chip. |
| 地址 |
Ansan-si KR |
