Nitride Light Emitting Diode and Fabrication Method Thereof

摘要

A nitride light-emitting diode including: a substrate with sub-micro patterns over the surface, which is divided into a growth region and a non-growth region; a growth blocking layer, formed in the non-growth region of the substrate for blocking epitaxial growth in the non-growth region of the substrate; a light-emitting epitaxial layer, comprising an n-type layer, a light-emitting layer and a p-type layer, formed in the growth region of the substrate, which extends to the non-growth region through lateral epitaxy and covers the growth blocking layer; wherein, the refractive index of the growth blocking layer is less than that of the light-emitting epitaxial layer and the growth blocking layer forms undulating morphology along the sub-micro patterns of the substrate, thus increasing light extraction interface of LED, generating refractive index difference between the light-emitting epitaxial layer and the light extraction interface and improving light extraction efficiency.

主权项

1. A nitride light-emitting diode, comprising:
a substrate having a surface with sub-micro patterns, including a growth region and a non-growth region; a growth blocking layer, formed in the non-growth region of the substrate for blocking epitaxial growth in the non-growth region of the substrate; a light-emitting epitaxial layer, comprising an n-type layer, a light-emitting layer, and a p-type layer, formed in the growth region of the substrate, extending to the non-growth region through lateral epitaxy and covering the growth blocking layer; wherein, a refractive index of the growth blocking layer is less than that of the light-emitting epitaxial layer, and the growth blocking layer forms undulating morphology along the sub-micro patterns of the substrate, thereby increasing a light extraction interface of light-emitting diode and generating a refractive index difference between the light-emitting epitaxial layer and the light extraction interface.