| 摘要 |
PROBLEM TO BE SOLVED: To improve humidity resistance of a semiconductor integrated circuit equipped with an interlayer insulation film composed of benzocyclobutene.SOLUTION: A semiconductor device includes a substrate 101, and wiring 102, an interlayer insulation film 103, through wiring 104, wiring 105 and the like are formed on the substrate 101 to form a semiconductor integrated circuit 151. The semiconductor device includes: a first protection film 106 formed to cover the semiconductor integrated circuit 151; a second protection film 107 formed on the first protection film 106; and a third protection film 108 formed on the second protection film 107. The interlayer insulation film 103 is composed of benzocyclobutene. The first protection film 106 is composed of silicon nitride. The second protection film 107 is composed of an organic material having water permeability less than that of benzocyclobutene. The third protection film 108 is composed of an inorganic material. |
