| 摘要 |
PROBLEM TO BE SOLVED: To form a thin film having excellent ashing resistance while maintaining high etching resistance.SOLUTION: A manufacturing method of a semiconductor device comprises a process of performing the predetermined number of cycles each including: a step of supplying to a substrate, material gas which serves as a silicon source and a carbide source or material gas which serves as a silicon source but does not serve as a carbon source, and catalyst gas; a step of supplying oxide gas and catalyst gas to the substrate; and a step of supplying to the substrate, reformed gas including at least either of carbide or nitride, thereby to form, on the substrate, a thin film containing silicon, oxide and carbon, or a thin film containing silicon, oxide, carbon, and nitrogen. |
