发明名称 |
METHOD OF FORMING A THIN FILM AND METHOD OF MANUFACTURING A NONVOLATILE MEMORY DEVICE USING THE SAME |
摘要 |
The present invention provides a method for forming a thin film and a method for manufacturing a nonvolatile memory device using the same which comprise the following steps of: depositing a thin film layer on a substrate; and including impurities in the thin film layer by performing treatment on the thin film layer. Deposition and treatment of the thin film layer are repetitively performed several times. |
申请公布号 |
KR20150124514(A) |
申请公布日期 |
2015.11.06 |
申请号 |
KR20140050744 |
申请日期 |
2014.04.28 |
申请人 |
JUSUNG ENGINEERING CO., LTD. |
发明人 |
SHIN, SEUNG CHUL;YOO, JIN HYUK;CHO, BYOUNG HA;CHEON, MIN HO |
分类号 |
H01L21/336;H01L21/205;H01L21/8247 |
主分类号 |
H01L21/336 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|