发明名称 METHOD OF FORMING A THIN FILM AND METHOD OF MANUFACTURING A NONVOLATILE MEMORY DEVICE USING THE SAME
摘要 The present invention provides a method for forming a thin film and a method for manufacturing a nonvolatile memory device using the same which comprise the following steps of: depositing a thin film layer on a substrate; and including impurities in the thin film layer by performing treatment on the thin film layer. Deposition and treatment of the thin film layer are repetitively performed several times.
申请公布号 KR20150124514(A) 申请公布日期 2015.11.06
申请号 KR20140050744 申请日期 2014.04.28
申请人 JUSUNG ENGINEERING CO., LTD. 发明人 SHIN, SEUNG CHUL;YOO, JIN HYUK;CHO, BYOUNG HA;CHEON, MIN HO
分类号 H01L21/336;H01L21/205;H01L21/8247 主分类号 H01L21/336
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