| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a compound semiconductor vapor phase growth device capable of uniformly heating a susceptor without increasing size of the device. <P>SOLUTION: The compound semiconductor vapor phase growth device includes: a susceptor 31 for holding a substrate; and a heating unit 5 which heats a substrate 4 held by the susceptor 31 by heating the susceptor 31, and the device forms a compound semiconductor film on the substrate 4 by introducing film forming gases with the substrate 4 being heated. The heating unit 5 includes: a plurality of heating members 51 for heating each of divisional regions of the susceptor 31 by dividing the susceptor 31 into a plurality of sub-regions; electrode attaching parts provided at both ends of each heating member 51; and a current introducing terminals 53 connected to the electrode attaching parts and for introducing current into the heating members 51. One of the electrode attaching parts provided on at least one of a plurality of heating elements is shared in common with one of the electrode attaching parts of another heating element. <P>COPYRIGHT: (C)2013,JPO&INPIT</p> |
