| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a high frequency amplifier that more efficiently suppresses a leakage of high frequency waves from a bias line. <P>SOLUTION: The high frequency amplifier comprises: a high frequency board mounted with a high frequency transistor and a bias terminal for supplying bias power to the high frequency transistor; a sidewall provided with screw holes at intervals of half the wavelength of high frequency waves amplified by the high frequency transistor or less, and formed of metal; and a power board provided with the bias line arranged on a first surface to supply bias power, a ground pattern arranged on the first surface of the power board, through holes connected to the ground pattern and spaced at intervals of half the wavelength of high frequency waves amplified by the high frequency transistor or less, a ground layer on a second surface in contact with the sidewall, a capacitor connecting the bias line and the ground pattern, and a passage hole for the passage of the bias line, and retained on the sidewall by means of screws. <P>COPYRIGHT: (C)2013,JPO&INPIT</p> |
