| 发明名称 | In<sub>2</sub>O<sub>3</sub>—SnO<sub>2</sub>—ZnO sputtering target | ||
| 摘要 | A sputtering target including indium (In), tin (Sn) and zinc (Zn) and an oxide including one or more elements X selected from the following group X, the atomic ratio of the elements satisfying the following formulas (1) to (4):Group X: Mg, Si, Al, Sc, Ti, Y, Zr, Hf, Ta, La, Nd, Sm 0.10≦In/(In+Sn+Zn)≦0.85 (1)0.01≦Sn/(In+Sn+Zn)≦0.40 (2)0.10≦Zn/(In+Sn+Zn)≦0.70 (3)0.70≦In/(In+X)≦0.99 (4). | ||
| 申请公布号 | US9214519(B2) | 申请公布日期 | 2015.12.15 |
| 申请号 | US201214116322 | 申请日期 | 2012.05.07 |
| 申请人 | IDEMITSU KOSAN CO., LTD. | 发明人 | Itose Masayuki;Nishimura Mami;Sunagawa Misa;Kasami Masashi;Yano Koki |
| 分类号 | H01B1/02;H01L29/24;C04B35/01;C04B35/453;C04B35/457;C23C14/08;C23C14/34;H01L21/02 | 主分类号 | H01B1/02 |
| 代理机构 | Foley & Lardner LLP | 代理人 | Foley & Lardner LLP |
| 主权项 | 1. A sputtering target comprising indium (In), tin (Sn) and zinc (Zn) and an oxide comprising one or more elements X selected from the following group X, an atomic ratio of the elements satisfying the following formulas (1) to (4), wherein an average crystal particle diameter of a compound comprising the element X and oxygen is 10 μm or less, and a maximum peak intensity (I(Zn2SnO4)) of a spinel structure compound represented by Zn2SnO4 contained in the sputtering target and a maximum peak intensity (Ix) of a compound comprising the element X and oxygen in the X-ray diffraction analysis (XRD) satisfy the following formula (6): Group X: Mg, Si, Al, Sc, Ti, Y, Zr, Hf, Ta, La, Nd, Sm 0.10≦In/(In+Sn+Zn)≦0.85 (1)0.01≦Sn/(In+Sn+Zn)≦0.40 (2)0.10≦Zn/(In+Sn+Zn)≦0.70 (3)0.70≦In/(In+X)≦0.99 (4)Ix/I(Zn2SnO4)≦0.15 (6). | ||
| 地址 | Tokyo JP | ||