Method for manufacturing semiconductor device

摘要

A method for manufacturing a semiconductor device is provided. The method includes forming an insulation film including a trench on a substrate, forming a first metal gate film pattern along side and bottom surfaces of the trench, forming a second metal gate film on the first metal gate film pattern and the insulation film, and forming a second metal gate film pattern positioned on the first metal gate film pattern by removing the second metal gate film to expose at least a portion of the insulation film and forming a blocking layer pattern on the second metal gate film pattern by oxidizing an exposed surface of the second metal gate film pattern.

主权项

1. A method for manufacturing a semiconductor device, the method comprising:
forming an insulation film including a trench on a substrate; forming a high-k film pattern along side and bottom surface of the trench; forming a first metal gate film pattern on the high-k film pattern, wherein a first height from the substrate to an exposed top surface of the insulation film is greater than a second height from the substrate to a top surface of the first gate metal film pattern adjacent to the side surfaces of the trench; forming a second metal gate film on the first metal gate film pattern and the insulation film; forming a second metal gate film pattern on the first metal gate film pattern by removing the second metal gate film by a planarization process to expose at least a portion of the insulation film, wherein the second metal gate film pattern has a T-shaped section and fills completely the trench which is filled partially with the first metal gate film pattern, wherein a bottom surface of the T-shaped section directly contacts the first metal gate film pattern and a portion of side surface of the T-shaped section does not directly contact the first metal gate film pattern; and forming a blocking layer pattern on the second metal gate film pattern by oxidizing an exposed surface of the second metal gate film pattern, wherein a side surface of the high-k film pattern directly contacts with a side surface of the blocking layer pattern and a side surface of the second metal gate film pattern, wherein forming the second metal gate film pattern and forming the blocking layer pattern are substantially simultaneously performed by the planarization process, wherein the second metal gate film pattern directly contacts the first metal gate film pattern and the high-k film pattern, wherein the first metal gate film pattern formed along the side surfaces of the trench is apart from the blocking layer pattern in a vertical direction, and wherein the first metal gate film pattern formed along the side surfaces of the trench does not overlap the blocking layer pattern in a horizontal direction.