| 发明名称 |
Resistance memory device and memory apparatus and data processing system |
| 摘要 |
A resistance memory device and a memory apparatus and data processing apparatus having the same are provided. The resistance memory device includes a pair of electrode layers and a variable resistance layer interposed between the pair of electrode layers. The variable resistance layer includes at least one variable resistance material layer and a piezoelectric material layer coupled to the at least one variable resistance material layer. |
| 申请公布号 |
US9214223(B2) |
申请公布日期 |
2015.12.15 |
| 申请号 |
US201313971069 |
申请日期 |
2013.08.20 |
| 申请人 |
SK HYNIX INC. |
发明人 |
Hwang Hyun Mi;Lee Hyung Dong |
| 分类号 |
G11C11/00;G11C13/00;H01L45/00;H01L41/09;G11C23/00 |
主分类号 |
G11C11/00 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A resistance memory device, comprising:
a pair of electrode layers; and a variable resistance layer interposed between the pair of electrode layers, wherein the variable resistance layer includes a first variable resistance layer, a second variable resistance layer, and a third variable resistance layer, wherein the second variable resistance layer includes a stack of a piezoelectric material layer and a variable resistance material layer, and wherein the first and the third variable resistance layers include variable resistance materials but do not include a piezoelectric material. |
| 地址 |
Icheon KR |
