| 摘要 |
<p>PURPOSE:To use an electrostatic chuck preferably for a heat CVD unit or the like to be used under conditions of high temperature and middle to high vacuum, prevent warping or distortion in a wafer in heat processing the wafer, and achieve a uniform heat for the whole surface of the wafer. CONSTITUTION:A film-type electrode 1 is formed on a main surface 4a of a disc-like ceramic substrate 4. An insulation dielectric layer 2 comprising silica nitride or the like is formed on the disc-like ceramic substrate 4 covering the film-type electrode 1 to be integrated. The film-like electrode 1 is thus included between the ceramic substrate and insulation dielectric layer 2. An electrode terminal 5 is embedded in the ceramic substrate 4, the film-type electrode 1 is connected with one end of the electrode terminal 5, and an electrode cable 6 is connected with the other end of the electrode terminal 5. This electrode cable 6 is connected with a positive pole of a DC power supply 8, and a negative pole of the DC power supply 8 is connected with a ground wire 7. The insulation dielectric layer 2 comprises ceramic of a pore ratio of 3% or less, and a pore diameter of 5 m or less for the maximum pore.</p> |
