发明名称 MANUFACTURING METHOD OF X-RAY MASK
摘要 <p>PURPOSE:To provide the X-ray mask capable of attaining to the reinforcement frame junction at high visible ray transmittivity and yet low deformation level. CONSTITUTION:A protective film 2 is to be formed on the rear surface of a mask supporter (base substrate) 1 before the formation of a mask substrate i.e., an X-ray transmissive thin film 3a on the mask supporter 1. Besides, a buffer layer is to be formed at the substrate temperature of 700-900 deg.C before the formation of the X-ray transmissive thin film 3a. Furthermore, the buffer layer to be formed before the formation of the X-ray transmissive thin film 3a is to be etched away after the formation of the X-ray transmissive thin film 3a.</p>
申请公布号 JPH0661124(A) 申请公布日期 1994.03.04
申请号 JP19920214300 申请日期 1992.08.11
申请人 TOSHIBA CORP 发明人 MUROOKA KENICHI;ITO MASAMITSU;SUGIHARA SHINJI
分类号 G03F1/22;H01L21/027;(IPC1-7):H01L21/027;G03F1/16 主分类号 G03F1/22
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