DOUBLE-LAYER STRUCTURE INSULATION FILM AND ELECTRONIC DEVICE USING IT AND TFT LIQUID CRYSTAL DISPLAY

摘要

PURPOSE:To prevent a defect from being generated at a step part by optimizing the film thickness of each insulation film conforming to an electrode wiring shape when forming a double-layer structure insulation film. CONSTITUTION:An insulation film formed on the wirings of gate electrodes 13a and 13b with steps is a double-layer structure insulation film consisting of a first insulation film 14a with a shape expressed by a discontinuous curve where the surface shape of a part covering an electrode wiring step part has a specific point and a second insulation film 14b with a shape expressed by a discontinuous curve where the surface shape of a part covering the step part of the first insulation film has no specific points. A film thickness configuration with a relationship satisfying expressions provides a TFT with improved electrical characteristics where the G-S short-circuiting rate is low and the insulation breakdown voltage is superb.