MANUFACTURE OF THIN FILM TRANSISTOR AND LIQUID CRYSTAL DISPLAY DEVICE

摘要

PURPOSE:To prevent the difficulty of a regist film peeling off by forming different conductive S/D region layers in respective two operating semiconductor layers of a C-MOS without using a regist film as an ion implantation mask in the manufacturing method of a TFT which consists of CMOS and used for a TFT active matrix LCD. CONSTITUTION:The manufacturing method consists of a process in which one conductive impurities are ion implanted to a second operating semiconductor layer 22b located on the both sides of a second gate electrode 24c employing an acceleration energy so that the impurities pass a first operating semiconductor layer 22a and also a residual insulation film 23b and forms a pair of second source/drain region layers 29a and 29b and a process in which opposite conductive impurities are ion implanted to a first operating semiconductor layer 22a located on the both sides of a first gate electrode 24a employing an acceleration energy so that the introduction of the impurities to a second operating semiconductor layer 22b is prevented by the residual insulation film 23b and forms a pair of first source/drain region layers 30a and 30b.