| 摘要 |
<p>PURPOSE:To provide the structure of the semiconductor device and the process for production thereof which produce the semiconductor device inexpensively at a high yield. CONSTITUTION:The production is executed by just three times of film formation stages and 4 times of patterning stages. Namely, a transparent conductive layer 6, a low resistance layer 7 and a semiconductor 5 contg. an impurity are continuously formed in nearly the same pattern on a substrate 1 in the first time. A semiconductor 4, an insulator layer 3 and a low resistance layer 2 are then continuously formed in nearly the same pattern in the second time. Further, the semiconductor layer 5 contg. an impurity and the low resistance layer 7 are laminated on the transparent conductive layer 6 and further, the insulator layer 14 is laminated thereon in the third time and the insulator layer 14 is patterned by using a dry etching method in the fourth time.</p> |
