| 摘要 |
PURPOSE:To provide a device which is capable of continuously forming a semiconductor multilayer film of large area excellent and uniform in characteristics for a photovoltaic device. CONSTITUTION:A winding-off chamber 101 of a belt-like plate 108, semiconductor film forming chambers 102A, 103, 104A, 105A, 102B, 104B, 105B, 102C, 104C, and 105C, and a winding-up chamber 106 are arranged in this sequence in a direction in which the belt-like plate 108 is transferred. These semiconductor film forming chambers are linked together through the intermediary of gas gates, and a silicon non-single crystal semiconductor multilayer film of nipnipnip structure used for a photovoltaic device is continuously formed on the belt-like plate 108 which is continuously moved through the film forming chambers 102A, 103, 104A, 105A, 102B, 104B, 105B, 102C, 104C, and 105C. |
