发明名称 Method for producing a semiconductor component having a contact structure for vertical contact-making with other semiconductor components
摘要 Semiconductor component having a contact structure for vertical contact-making with other semiconductor components, having a substrate (15) which, on an upper side, has a layer structure with regions with which to make contact, in which there is at least one metal pin (8) which pierces this substrate (15) perpendicularly to the layer structure, in which the substrate (15) is thinned until the metal pin (9) projects from the lower side of the substrate and in which, optionally, there are metal contacts (12) of low-melting metal on the upper side. <IMAGE>
申请公布号 DE4314913(C1) 申请公布日期 1994.08.25
申请号 DE19934314913 申请日期 1993.05.05
申请人 SIEMENS AG, 80333 MUENCHEN, DE 发明人 WINNERL, JOSEF, DR.-ING., 8000 MUENCHEN, DE;NEUMUELLER, WALTER, DIPL.-PHYS., 8000 MUENCHEN, DE;ALSMEIER, JOHANN, DR.RER.NAT., 8000 MUENCHEN, DE
分类号 H01L23/522;H01L21/768;H01L21/8238;H01L23/48;H01L25/065;H01L27/00;H01L27/092;(IPC1-7):H01L23/52;H01L21/90 主分类号 H01L23/522
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